Initial results have been obtained for automatic synthesis of MEMS mask-layouts using a genetic algorithm. An initial random population of mask-layouts is produced. An initial fabrication process sequence is also generated. The fabrication of each geometrically valid layout is simulated using a 3-D simulation of etching. The 3-D results of the fabrication simulation are compared to the desired 3-D shape. Resulting 3-D shapes that are determined to be sufficiently close to the desired shape are kept in the candidate population. A genetic algorithm is applied to each member of the remaining population of mask-layouts (and fabrication processes) to introduce random shape (and process) variations. The procedure is then repeated until one or more simulated shape is sufficiently close to the desired shape to stop the iteration.

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